CRSM020N04L2
华润微电子(重庆)有限公司
SkyMOS2ꢀNꢁMOSFETꢀ40V,ꢀ1.4mꢂ,ꢀ80A
Features
Product Summary
VDS
40V
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS2ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀRDS(on)
•ꢀExcellentꢀQgxRDS(on)ꢀproduct(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
RDS(on)@10Vꢀtyp
RDS(on)@4.5Vꢀtyp
ID
1.4mꢂ
1.75mꢂ
80A
Applications
•ꢀSynchronousꢀRectificationꢀforꢀAC/DCꢀQuickꢀCharger
•ꢀBatteryꢀmanagement
100% Avalanche Tested
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
CRSM020N04L2
Package Marking and Ordering Information
Partꢀ#
Marking
Package
DFN5X6
ReelꢀSize TapeꢀWidth
Qty
Packing
CRSM020N04L2
SM020N04L2
Tape&Reel
N/A
N/A
5000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drainꢁsourceꢀvoltage
40
V
Continuousꢀdrainꢀcurrent
TCꢀ=ꢀ25°Cꢀ(siliconꢀlimit)
TCꢀ=ꢀ25°Cꢀ(Packageꢀlimit)
TCꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)
177
80
ID
A
109
Pulsedꢀdrainꢀcurrentꢀ(TCꢀ=ꢀ25°C,ꢀtpꢀlimitedꢀbyꢀTjmax
)
IDꢀpulse
EAS
320
210
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25Ω)[1]
GateꢁSourceꢀvoltage
VGS
±20
Powerꢀdissipationꢀ(TCꢀ=ꢀ25°Cꢀ)
Ptot
79.1
W
°C
Tjꢀ,ꢀT stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55...+150
※.ꢀNotes:1.EASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25℃,ꢀLꢀ=ꢀ0.5mH,ꢀIASꢀ=ꢀ29A,ꢀVGSꢀ=ꢀ10V.
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