Datasheet > CRSM024N06L2Z

CRSM024N06L2Z

更新时间： 2024-03-03 10:11:41

品牌	Logo	应用领域
华润微 - CRMICRO		光电二极管
页数	文件大小	规格书
10页	1445K
描述
PDFN5×6

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中文翻译

获取价格

数据手册

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CRSM024N06L2Z 数据手册

CRSM024N06L2Z

SkyMOS2 N-MOSFET 60V, 2.4mΩ, 80A

Features

Product Summary

V_DS

60V

• Uses CRM(CQ) advanced SkyMOS2 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on)@10V typ}

I_D

2.4mΩ

80A

100% Avalanche Tested

100% DVDS Tested

Applications

• Synchronous Rectification for AC/DC Quick Charger

• Battery management

• UPS (Uninterrupible Power Supplies)

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size Tape Width

Qty

Packing

CRSM024N06L2Z

024N06L2Z

DFN5X6 Clip

Tape&Reel

N/A

4000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

134

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

536

315

Avalanche energy, single pulse (L=0.5mH，Vds=60V)

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C )

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

Rev1.0

©China Resources Microelectronics (Chongqing) Limited

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