Datasheet > CRM10QT500S

CRM10QT500S

更新时间： 2024-11-16 17:02:11

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
7页	504K
描述
T2 Module

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中文翻译

获取价格

数据手册

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CRM10QT500S 数据手册

CRM10QT500S

Half Bridge N-Channel MOSFET Module

华润微电子(重庆)有限公司

Features

• Uses CRM(CQ) advanced Split Gate technology

• Extremely low on-resistance R_DS(on)

Product Summary

V_DS

100V

R_{DS(on) max.}

I_D

1.02mΩ

• Half Bridge N-Channel MOSFET Module

500A

Applications

• Motor drive

T2 Module

Package Marking and Ordering Information

Part #

Marking

Package

Reel Size

N/A

Tape Width

N/A

Qty

Packing

Tube

CRM10QT500S

T2 Module

10pcs

Absolute Maximum Ratings

Parameter

Symbol

Maximum

Unit

V_DS

I_D

Drain-source voltage

100

500

Continuous drain current T_C= 25°C

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=3mH, Rg=25Ω)

Gate-Source voltage

)

I_{D pulse}

E_AS

1200

13757

V_GS

Power dissipation (T_C= 25°C)

P_tot

595

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Thermal Resistance

Parameter

Symbol

Typ

Max

0.21

Unit

R_thJh

Thermal resistance, junction – heatsink.

°C/W

Rev1.0

©China Resources Microelectronics (Chongqing) Limited

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中文翻译

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