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CRCW120610ROJNEA

更新时间： 2024-11-16 12:50:43
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飞思卡尔 - FREESCALE 晶体晶体管
页数 文件大小 规格书
19页 948K
描述
RF Power LDMOS Transistors

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Document Number: MRF6V3090N  
Rev. 1, 12/2011  
Freescale Semiconductor  
Technical Data  
RF Power LDMOS Transistors  
MRF6V3090NR1  
MRF6V3090NR5  
MRF6V3090NBR1  
MRF6V3090NBR5  
Enhancement--Mode Lateral MOSFETs  
Designed for commercial and industrial broadband applications with  
frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast  
applications.  
•
Typical Performance (Narrowband Test Circuit): VDD = 50 Volts, IDQ  
350 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.  
=
P
(W)  
f
G
(dB)  
η
(%)  
ACPR  
(dBc)  
out  
ps  
D
470--860 MHz, 90 W, 50 V  
BROADBAND  
Signal Type  
(MHz)  
RF POWER LDMOS TRANSISTORS  
DVB--T (8k OFDM)  
18 Avg.  
860  
22.0  
28.5  
--62.0  
•
Typical Performance (Broadband Reference Circuit): VDD = 50 Volts,  
DQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability  
on CCDF.  
I
CASE 1486--03, STYLE 1  
T O -- 2 7 0 W B -- 4  
PLASTIC  
MRF6V3090NR1(NR5)  
Output  
Signal PAR Shoulder  
IMD  
P
f
G
η
D
out  
ps  
Signal Type  
(W)  
(MHz) (dB)  
(%)  
26.8  
28.0  
28.3  
(dB)  
8.6  
(dBc)  
--31.8  
--34.4  
--29.2  
DVB--T (8k OFDM) 18 Avg.  
470  
650  
860  
21.6  
22.9  
21.9  
8.7  
7.9  
Features  
CASE 1484--04, STYLE 1  
T O -- 2 7 2 W B -- 4  
PLASTIC  
MRF6V3090NBR1(NBR5)  
•
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,  
90 Watts CW Output Power  
•
•
•
•
•
•
Characterized with Series Equivalent Large--Signal Impedance Parameters  
Internally Input Matched for Ease of Use  
Qualified Up to a Maximum of 50 VDD Operation  
Integrated ESD Protection  
Excellent Thermal Stability  
Greater Negative Gate--Source Voltage Range for Improved Class C  
Operation  
PARTS ARE SINGLE--ENDED  
Gate  
Gate  
Drain  
Drain  
•
•
225°C Capable Plastic Package  
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.  
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.  
Table 1. Maximum Ratings  
Rating  
Symbol  
Value  
Unit  
(Top View)  
Drain--Source Voltage  
V
--0.5, +110  
--6.0, +10  
-- 65 to +150  
150  
Vdc  
Vdc  
°C  
DSS  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
Gate--Source Voltage  
V
GS  
Storage Temperature Range  
Case Operating Temperature  
T
stg  
Figure 1. Pin Connections  
T
°C  
C
(1,2)  
Operating Junction Temperature  
T
J
225  
°C  
Table 2. Thermal Characteristics  
(2,3)  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
R
θ
°C/W  
JC  
Case Temperature 76°C, 18 W CW, 50 Vdc, I  
Case Temperature 80°C, 90 W CW, 50 Vdc, I = 350 mA, 860 MHz  
= 350 mA, 860 MHz  
0.79  
0.82  
DQ  
DQ  
1. Continuous use at maximum temperature will affect MTTF.  
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF  
calculators by product.  
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.  
Select Documentation/Application Notes -- AN1955.  
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.  
1234567...19

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