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CR2353AB PDF预览

CR2353AB

更新时间: 2024-11-17 22:36:15
品牌 Logo 应用领域
力特 - LITTELFUSE 触发装置硅浪涌保护器
页数 文件大小 规格书
2页 82K
描述
Bi-directional Glass passivated junction

CR2353AB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.92Is Samacsys:N
其他特性:UL RECOGNIZED最大转折电压:270 V
最小转折电压:270 V配置:DELTA CONNECTED, 3 ELEMENTS
最大断态直流电压:200 V最大维持电流:150 mA
JEDEC-95代码:TO-220JESD-30 代码:R-PSIP-T3
通态非重复峰值电流:150 A元件数量:3
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
重复峰值反向电压:200 V子类别:Silicon Surge Protectors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

CR2353AB 数据手册

 浏览型号CR2353AB的Datasheet PDF文件第2页 
TO - 220 series SiBOD™  
FEATURES  
4.9/  
5.1  
10.1/10.3  
Bi-directional  
Glass passivated junction  
High-surge capabilities  
Low capacitance  
9.1/  
9.5  
Operation & storage temperature -55°C to 175°C  
MECHANICAL CHARACTERISTICS  
3.5  
Modified TO-220 Outline  
Terminals: Solderable to MIL-STD-202  
Method 208  
15.25/  
15.65  
Weight 1.4 grammes (approx)  
NOTES  
0.46/  
0.61  
0.8  
2.54  
(i) VBR IS MEASURED @ 1mA USING A PULSE OF 20mSEC OR LESS  
5.08  
(ii)  
TYPE AB  
-
TYPE AC  
100.0  
-
PEAK PULSE CURRENT (A)  
10 / 1000µS WAVE SHAPE  
10 / 560µS WAVE SHAPE  
10 / 160µS WAVE SHAPE  
TYPE AA  
-
100.0  
150.0  
50.0  
200.0  
100.0  
(iii) ALL TESTING PERFORMED @ 25°C  
EQUIVALENT CIRCUIT  
CR XXX 2 XX SERIES  
CR XXX 3 XX SERIES  
GND  
TIP  
(A)  
RING  
(B)  
GND  
TIP  
(A)  
RING  
(B)  
w w w. l i t t e l f u s e . c o m  
57  

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