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CR18N50FA9K PDF预览

CR18N50FA9K

更新时间: 2024-11-16 15:19:19
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 1054K
描述
TO-220F

CR18N50FA9K 数据手册

 浏览型号CR18N50FA9K的Datasheet PDF文件第2页浏览型号CR18N50FA9K的Datasheet PDF文件第3页浏览型号CR18N50FA9K的Datasheet PDF文件第4页浏览型号CR18N50FA9K的Datasheet PDF文件第5页浏览型号CR18N50FA9K的Datasheet PDF文件第6页浏览型号CR18N50FA9K的Datasheet PDF文件第7页 
Silicon N-Channel Power MOSFET  
CR18N50F A9K  
VDSS  
500  
18  
V
A
General Description  
ID  
CR18N50F A9K, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor can  
be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-220F, which accords with the RoHS standard.  
Features  
PD(TC=25)  
RDS(ON)Typ  
43  
W
0.33  
Fast Switching  
Low ON Resistance  
Low Gate Charge  
Low Reverse transfer capacitances  
100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTc= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
500  
V
A
Continuous Drain Current  
18  
ID  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current  
11  
A
a1  
72  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation  
875  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
43  
0.34  
PD  
Derating Factor above 25°C  
Operating Junction and Storage Temperature Range  
W/℃  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2022V01  

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