Datasheet > CR05AS

CR05AS

更新时间： 2024-01-21 23:06:05

品牌	Logo	应用领域
SUNTAC		栅
页数	文件大小	规格书
3页	70K
描述
Sensitive Gate Silicon Controlled Rectifiers

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技术参数
数据手册

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CR05AS 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.83
Is Samacsys：	N	配置：	SINGLE
二极管类型：	ZENER DIODE	最大动态阻抗：	10 Ω
JESD-609代码：	e0	元件数量：	1
最高工作温度：	100 °C	最大功率耗散：	0.25 W
标称参考电压：	6.3 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
最大电压容差：	5%	工作测试电流：	7.5 mA
Base Number Matches：	1

CR05AS 数据手册

MCR100 Series

CR05AS Series

SCR

Sensitive Gate

0.8 AMPERES RMS

300 thru 800 VOLTS

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for high volume, line-powered consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic

SOT-89 package which is

readily adaptable for use in automatic insertion equipment.

• Sensitive Gate Allows Triggering by Microcontrollers and Other

Logic Circuits

• Blocking Voltage to 800 V

• On−State Current Rating of 0.8 Amperes RMS at 80°C

• High Surge Current Capability — 10 A

• Minimum and Maximum Values of IGT, VGT and IH Specified for

Ease of Design

• Immunity to dV/dt — 20 V/msec Minimum at 110°C

• Glass-Passivated Surface for Reliability and Uniformity

•

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

SOT-89

(Note 1)

Peak Repetitive Off−State Voltage

DRM,

(T = *40 to 110°C, Sine Wave, 50 to

RRM

60 Hz; Gate Open)

CR05AS-3

CR05AS-4

CR05AS-6

CR05AS-8

300

400

600

800

PIN ASSIGNMENT

Gate

Anode

On-State RMS Current

(T = 80°C) 180° Conduction Angles

0.8

T(RMS)

Cathode

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz,

TSM

T = 25°C)

Circuit Fusing Consideration (t = 8.3 ms)

I t

0.415

0.1

A s

Forward Peak Gate Power

(T = 25°C, Pulse Width v 1.0 ms)

Forward Average Gate Power

(T = 25°C, t = 8.3 ms)

0.10

1.0

G(AV)

Forward Peak Gate Current

(T = 25°C, Pulse Width v 1.0 ms)

Reverse Peak Gate Voltage

GRM

5.0

(T = 25°C, Pulse Width v 1.0 ms)

Operating Junction Temperature Range

−40 to

110

°C

@ Rate V

and V

RRM

DRM

Storage Temperature Range

stg

−40 to

150

4(1) V

DRM

and V for all types can be applied on a continuous basis. Ratings

RRM

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant source such that the voltage

ratings of the devices are exceeded.

12 3

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