Datasheet > CR05AS-4BC

CR05AS-4BC

更新时间： 2024-02-10 02:04:25

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
5页	67K
描述
Silicon Controlled Rectifier, 1 Element, SOT-89, 3 PIN

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数据手册

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CR05AS-4BC 数据手册

MITSUBISHI SEMICONDUCTOR THYRISTOR

CR05AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

CR05AS

Dimensions

OUTLINE DRAWING

in mm

4.4±0.1

1.5±0.1

1.6±0.2

0.5±0.07

0.4±0.07

+0.03

–0.05

0.4

1.5±0.11.5±0.1

(Back side)

TERMINAL

GATE TERMINAL

• IT (AV) ........................................................................0.5A

• VDRM ..............................................................200V/400V

• IGT .........................................................................100µA

SOT-89

APPLICATION

Solid state relay, strobe flasher, ignitor, hybrid IC

MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Unit

4 (marked “CB”)

8 (marked “CD”)

VRRM

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

200

300

160

200

160

400

500

320

400

320

VRSM

VR (DC)

VDRM

✽1

Repetitive peak off-state voltage

DC off-state voltage

VD (DC)

Symbol

Parameter

RMS on-state current

Average on-state current

Surge on-state current

Conditions

Ratings

Unit

IT (RMS)

IT (AV)

ITSM

0.79

0.5

✽2

Commercial frequency, sine half wave, 180° conduction, Ta=57°C

60Hz sine half wave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

I t

I t for fusing

0.4

A s

PGM

PG (AV)

VFGM

VRGM

IFGM

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

0.1

0.01

0.1

–40 ~ +125

°C

Tstg

Storage temperature

—

Weight

Typical value

✽1. With Gate-to-cathode resistance RGK=1kΩ

Feb.1999

12 3 4 5

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