CQ202-4N-2LEADFREE

更新时间： 2024-11-18 13:01:31

品牌	Logo	应用领域
CENTRAL		栅极触发装置三端双向交流开关
页数	文件大小	规格书
2页	36K
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数据手册

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CQ202-4N-2LEADFREE 数据手册

浏览型号CQ202-4N-2LEADFREE的Datasheet PDF文件第2页

CQ202-4B-2

CQ202-4D-2

CQ202-4M-2

CQ202-4N-2

Central

Semiconductor Corp.

4.0 AMP TRIAC

200 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CQ202-4B-2

series type is an Epoxy Molded Silicon Triac

designed for full wave AC control applications

featuring gate triggering in all four (4) quadrants.

MARKING CODE: FULL PART NUMBER

TO-202-2 THYRISTOR CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CQ202 CQ202

-4B-2

-4D-2

-4M-2

-4N-2 UNITS

Peak Repetitive Off-State Voltage

200

400

600

800

DRM

RMS On-State Current (T =80°C)

4.0

T(RMS)

TSM

Peak Non-Repetitive Surge Current (t=8.3ms)

Peak Non-Repetitive Surge Current (t=10ms)

I²t Value for Fusing (t=10ms)

Peak Gate Power (tp=10µs)

Average Gate Power Dissipation

Peak Gate Current (tp=10µs)

Storage Temperature

TSM

I²t

6.0

3.0

0.2

1.2

A²s

G(AV)

-40 to +150

-40 to +125

°C

°C/W

stg

Junction Temperature

Thermal Resistance

7.5

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

Rated V

=1KΩ

DRM

DRM, GK

, R =1KΩ, T =125°C

DRM GK

200

µA

DRM

V =12V, QUAD I, II, III

V =12V, QUAD IV

6.6

=1KΩ

5.2

1.1

2.0

1.25

V =12V, QUAD I, II, III

V =12V, QUAD IV

1.5

2.5

1.60

=6.0A, tp=380µs

dv/dt

V = / V

T =125°C

5.0

V/µs

DRM, C

R1 (27-June 2005)

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