Datasheet > CPMF-1200-S160B

CPMF-1200-S160B

更新时间： 2024-01-03 13:39:12

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
10页	701K
描述
N-Channel Enhancement Mode Bare Die

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中文翻译

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数据手册

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CPMF-1200-S160B 数据手册

CPMF-1200-S160B

V_DS

= 1200 V

Z-FeT^TMSilicon Carbide MOSFET

R_DS(on)

Q_g

= 160 mΩ

= 47 nC

N-Channel Enhancement Mode

Bare Die

Features

Package

• Industry Leading R_DS(on)

• High Speed Switching

• Low Capacitances

• Easy to Parallel

Gate

Source

• Simple to Drive

• Lead-Free

Beneﬁts

DIE

• Higher System Efﬁciency

• Reduced Cooling Requirements

• Avalanche Ruggedness

Part Number

Package

DIE

• Increase System Switching Frequency

CPMF-1200-S160B

Applications

• Solar Inverters

• Motor Drives

• Military and Aerospace

Maximum Ratings

Symbol

Parameter

Value

Unit

Test Conditions

V_GS@20V, T_J= 25˚C

Note

Continuous Drain Current

I_D

V_GS@20V, T_J= 100˚C

Pulse width t_Plimited by T_jmax

T_j= 25˚C, tp = 1ms

Pulsed Drain Current

I_Dpulse

E_AS

I_D= 10A, V_DD= 50 V,

L = 9.5 mH

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

500

400

E_AR

t_ARlimited by T_jmax

I_D= 10A, V_DD= 50 V, L = 3 mH

t_ARlimited by T_jmax

Repetitive Avalanche Current

I_AR

Gate Source Voltage

-5/+25

202

V_GS

P_tot

Power Dissipation

T_J=25˚C

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

˚C

T_J, T_stg

T_L

260

1.6mm (0.063”) from case for 10s

Note:

1. Assumes a thermal resistance junction to case of ≤ 0.62 °C/W.

CPMF-1200-S160B Rev. A

12 3 4 5 6 7...10

中文翻译

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