Datasheet > CPD80V-CMPD2004-CTTIN/LEAD

CPD80V-CMPD2004-CTTIN/LEAD

更新时间： 2024-01-17 08:18:26

品牌	Logo	应用领域
CENTRAL		/
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5页	546K
描述
Rectifier Diode,

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技术参数
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CPD80V-CMPD2004-CTTIN/LEAD 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

CPD80V-CMPD2004-CTTIN/LEAD 数据手册

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CPD80V-CMPD2004

Switching Diode Die

0.2 Amp, 300 Volt

www.centralsemi.com

The CPD80V-CMPD2004 is a 0.2 Amp, 300 Volt silicon switching diode ideal for all types of

commercial, industrial, entertainment, and computer applications.

MECHANICAL SPECIFICATIONS:

Die Size

16.1 x 16.1 MILS

7.1 MILS

Die Thickness

Anode Bonding Pad Size

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

8.3 x 8.3 MILS

Al – 30,000Å

Au-As – 9,000Å

1.97 MILS

ANODE

5 INCHES

Gross Die Per Wafer

65,400

BACKSIDE CATHODE

MAXIMUM RATINGS: (T =25°C)

Continuous Reverse Voltage

SYMBOL

UNITS

240

300

Peak Repetitive Reverse Voltage

Average Forward Current

RRM

200

Continuous Forward Current

225

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0μs

Peak Forward Surge Current, tp=1.0s

Operating and Storage Junction Temperature

625

FRM

4.0

FSM

1.0

T , T

-65 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

V =240V

MIN

MAX

100

UNITS

I =100μA

300

I =100mA

1.0

5.0

V =0, f=1.0MHz

I =I =30mA, I =3.0mA, R =100Ω

R1 (30-November 2016)

12 3 4 5

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