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CPC7556N PDF预览

CPC7556N

更新时间: 2024-11-18 07:08:55
品牌 Logo 应用领域
CLARE 二极管
页数 文件大小 规格书
6页 497K
描述
Diode Bridge with Integrated Adjustable OVP Circuit

CPC7556N 数据手册

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CPC7556  
Diode Bridge with Integrated  
Adjustable OVP Circuit  
Bridge Characteristics  
Description  
100V Diode Bridge with an integrated Over-Voltage  
Protection (OVP) thyristor uses Clare's High Voltage  
SOI technology.  
Parameter  
Rating  
Units  
Reverse Voltage  
100  
V
mArms  
Forward Current  
Thyristor Current  
240  
120  
The CPC7556N integrated diode bridge offers  
protection from high voltage transients by means of an  
adjustable voltage clamp. The clamp performs two  
actions, first to limit the voltage across the diode  
bridge rectified outputs to a value determined by  
external resistors and the gate voltage and second to  
fully discharge the V to V outputs when the Gate’s  
mA  
Features  
Monolithic Construction  
Surface Mount Package  
+
trigger threshold is exceeded during the voltage  
limiting function. The rectified outputs are discharged  
as a result of the voltage fold-back function of the OVP  
device. Voltage fold back of the OVP circuit will  
continue until the current through the protector falls  
below the hold current threshold.  
Applications  
Telecommunications Protection Clamp  
High Voltage Multiplexer/Switch  
High Voltage ESD Clamp  
Terminating the gate to V will disable the clamp  
voltage feature up to the thyristor’s off state voltage.  
Ordering Information  
RoHS  
2002/95/EC  
Pb  
e3  
Part  
Description  
CPC7556N  
8-Pin SOIC in Tubes (50/Tube)  
CPC7556NTR 8-Pin SOIC Tape & Reel (1000/Reel)  
CPC7556N Diagram  
A/B  
B/A  
+
A
K
G
-
DS-CPC7556 - R02  
www.clare.com  
1

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