Datasheet > CP375-CWDM3011N

CP375-CWDM3011N

更新时间： 2024-11-26 14:53:27

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CENTRAL		/
页数	文件大小	规格书
6页	965K
描述
11A,30V Bare die,62.000 X 38.000 mils,MOSFET

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CP375-CWDM3011N 数据手册

CP375

N-Channel MOSFET Die

Enhancement-Mode

www.centralsemi.com

The CP375 medium power N-Channel MOSFET is designed for power management and load

switching applications. The 7.5 mil thick die provides an ultra low proﬁle device that is readily

attached using standard die attach wire bond processes.

APPLICATIONS:

• Load switching

• Power management

• DC-DC conversion

FEATURES:

• Low on-resistance, r

DS(ON)

• Low gate charge, Q

• High drain current density

MECHANICAL SPECIFICATIONS:

Die Size

62 x 38 MILS

Die Thickness

7.5 MILS

Gate Bonding Pad Area

Source Bonding Pad Area

Top Side Metalization

Back Side Metalization

Scribe Alley Width

Wafer Diameter

13.7 x 18.8 MILS

30 x 55 MILS

Al - 40,000Å

Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

3.15 MILS

8 INCHES

Gross Die Per Wafer

18,700

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Operating and Storage Junction Temperature

T , T

-55 to +150

°C

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

, I

=20V, V =0

100

GSSF GSSR

=30V, V =0

1.0

μA

DSS

=0, I =250μA

DSS

GS(th)

=V , I =250μA

1.0

1.8

3.0

1.2

GS DS

=0, I =2.6A

=10V, I =11A

mΩ

DS(ON)

=4.5V, I =9.0A

=15V, V =0, f=1.0MHz

100

860

120

rss

iss

=15V, V =0, f=1.0MHz

oss

R0 (13-August 2013)

12 3 4 5 6

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