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CNY172SM PDF预览

CNY172SM

更新时间: 2024-11-15 11:10:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管光电晶体管
页数 文件大小 规格书
12页 367K
描述
6 引脚 DIP 高 BVCEO 光电晶体管输出光耦合器

CNY172SM 数据手册

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DATA SHEET  
www.onsemi.com  
6-Pin DIP High BVCEO  
Phototransistor  
Optocouplers  
6
1
PDIP6  
CASE 646BY  
CNY17 Series, MOC8106M  
Description  
The CNY17XM, CNY17FXM, and MOC8106M devices consist of  
a gallium arsenide infrared emitting diode coupled with an NPN  
phototransistor in a dual inline package.  
6
1
PDIP6  
CASE 646BX  
Features  
High BV  
: 70 V Minimum  
CEO  
(CNY17XM, CNY17FXM, MOC8106M)  
Closely Matched Current Transfer Ratio (CTR) Minimizes  
UnittoUnit Variation  
Current Transfer Ratio In Select Groups  
6
Very Low Coupled Capacitance Along With  
No ChiptoPin 6 Base Connection for Minimum Noise  
Susceptibility (CNY17FXM, MOC8106M)  
1
PDIP6  
CASE 646BZ  
Safety and Regulatory Approvals:  
UL1577, 4,170 VAC  
for 1 Minute  
RMS  
MARKING DIAGRAM  
DINEN/IEC6074755, 850 V Peak Working  
Insulation Voltage  
Applications  
1
ON  
Power Supply Regulators  
Digital Logic Inputs  
Microprocessor Inputs  
Appliance Sensor Systems  
Industrial Controls  
2
6
CNY171  
V
X
YY  
Q
3
5
4
1.  
2.  
3.  
ON  
= onsemi Logo  
CNY17 = Device Number  
V
= DIN EN/IEC6074755 Option  
(only appears on component ordered  
with this option)  
4
X
= OneDigit Year Code  
5.  
6.  
YY  
Q
= Digit Work Week  
= Assembly Package Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 8 of  
this data sheet.  
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2022 Rev. 3  
CNY17F4M/D  

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