Datasheet > CNY17

CNY17

更新时间： 2024-11-13 22:40:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体光电晶体管光电晶体管
页数	文件大小	规格书
4页	150K
描述
TRIOS“ PHOTOTRANSISTOR OPTOCOUPLER

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中文翻译

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CNY17 数据手册

CNY17 SERIES

TRIOS“ PHOTOTRANSISTOR

OPTOCOUPLER

FEATURES

• High Current Transfer Ratio

CNY17-1, 40 to 80%

CNY17-2, 63 to 125%

CNY17-3, 100 to 200%

CNY17-4, 160 to 320%

• Breakdown Voltage, 5300 VAC

Dimensions in inches (mm)

Pin One ID

Anode

Cathode

Base

.248 (6.30)

.256 (6.50)

Collector

Emitter

RMS

•

Field-Effect Stable by TRIOS*

• Long Term Stability

• Industry Standard Dual-in-Line Package

.335 (8.50)

.343 (8.70)

.300 (7.62)

typ.

• Underwriters Lab File #E52744

.039

(1.00)

Min.

V_E

•

VDE #0884, Available with Option 1

.130 (3.30)

.150 (3.81)

DESCRIPTION

The CNY17 is an optically coupled pair consisting

of a Gallium Arsenide infrared emitting diode opti-

cally coupled to a silicon NPN phototransistor.

4°

typ.

18° typ.

.110 (2.79)

.150 (3.81)

.020 (.051) min.

.010 (.25)

.014 (.35)

.031 (0.80)

.035 (0.90)

Signal information, including a DC level, can be

transmitted by the device while maintaining a high

degree of electrical isolation between input and out-

put.

.018 (0.45)

.022 (0.55)

.300 (7.62)

.347 (8.82)

.100 (2.54) typ.

The CNY17 can be used to replace relays and

transformers in many digital interface applications,

as well as analog applications such as CRT modu-

lation.

Characteristics (T =25°C)

Symbol

Unit

Condition

Emitter

Maximum Ratings (T =25°C)

Forward Voltage

1.25

(≤1.65)

I = 60 mA

Emitter

Reverse Voltage .................................................6 V

Forward Current............................................ 60 mA

Surge Current (t≤10µs)................................... 2.5 A

Power Dissipation.......................................100 mW

Breakdown Voltage

Reverse Current

Capacitance

≥6

I = 10 mA

0.01 (≤10)

µA

K/W

V = 6 V

V = 0 V, f =1 MHz

Detector

Collector-Emitter Breakdown Voltage ...............70 V

Emitter-Base Breakdown Voltage .......................7 V

Collector Current .......................................... 50 mA

Collector Current (t <1 ms)......................... 100 mA

Power Dissipation.......................................150 mW

Thermal Resistance

Detector

750

thjamb

Capacitance

5.2

6.5

7.5

=5 V, f =1 MHz

Package

Isolation Test Voltage (Between emitter &

detector referred to climate DIN 40046,

Thermal Resistance

500

K/W

thjamb

part 2, Nov. 74) ..............................5300 VAC

RMS

Package

Creepage Distance .......................................... ≥7 mm

Clearance Distance ......................................... ≥7 mm

Isolation Thickness between

Collector-Emitter

Saturation Voltage

I =10 mA,

0.25 (≤0.4)

I =2.5 mA

CEsat

Emitter and Detector................................. ≥0.4 mm

Comparative Tracking Index per DIN IEC 112/

VDE0303, part 1.............................................175

Coupling Capacitance

0.6

Isolation Resistance

V =500 V, T =25°C................................... ≥10

Ω

V =500 V, T =100°C ................................ ≥10

Storage Temperature ................... –55°C to +150°C

Operating Temperature ............... –55°C to +100°C

Junction Temperature ....................................100°C

Soldering Temperature (max . 10 s, dip soldering:

distance to seating plane ≥1.5 mm) ..........260°C

5–1

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与CNY17相关器件

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CNY17_05	VISHAY	获取价格	Optocoupler, Phototransistor Output,
CNY17_13	VISHAY	获取价格	Optocoupler, Phototransistor Output, with Base Connection
CNY17-000E	AVAGO	获取价格	Phototransistor Optocoupler High Collector-Emitter Voltage Type
CNY17-060E	AVAGO	获取价格	Phototransistor Optocoupler High Collector-Emitter Voltage Type
CNY171	FAIRCHILD	获取价格	Phototransistor Optocouplers
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CNY17-1	LITEON	获取价格	Property of Lite-On Only
CNY17-1	EVERLIGHT	获取价格	6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
CNY17-1	ISOCOM	获取价格	OPTICALLY COUPLED ISOLATOR
CNY17-1	QT	获取价格	PHOTOTRANSISTOR OPTOCOUPLERS

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