Datasheet > CNY17-2-X001

CNY17-2-X001

更新时间： 2024-01-04 06:36:21

品牌	Logo	应用领域
威世 - VISHAY		输出元件
页数	文件大小	规格书
4页	467K
描述
Optocoupler - Transistor Output, 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER, DIP-6

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CNY17-2-X001 技术参数

生命周期：	Transferred	包装说明：	DIP-6
Reach Compliance Code：	unknown	HTS代码：	8541.40.80.00
风险等级：	5.18	Is Samacsys：	N
其他特性：	UL RECOGNIZED, VDE APPROVED	Coll-Emtr Bkdn Voltage-Min：	70 V
配置：	SINGLE	标称电流传输比：	63%
最大暗电源：	50 nA	最大正向电流：	0.06 A
最大绝缘电压：	5300 V	元件数量：	1
最高工作温度：	100 °C	最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	Base Number Matches：	1

CNY17-2-X001 数据手册

CNY17

TRIOS^Phototransistor

Optocoupler

FEATURES

Dimensions in inches (mm)

• High Current Transfer Ratio

CNY17-1, 40 to 80%

CNY17-2, 63 to 125%

CNY17-3, 100 to 200%

CNY17-4, 160 to 320%

pin one ID

Anode

Cathode

Base

.248 (6.30)

.256 (6.50)

Collector

Emitter

• Breakdown Voltage, 5300 V

RMS

• Field-Effect Stable by TRIOS—TRansparent

IOn Shield

• Long Term Stability

.335 (8.50)

.343 (8.70)

.300 (7.62)

typ.

.048 (1.22)

.022 (0.55)

.039

(1.00)

Min.

• Industry Standard Dual-in-Line Package

• Underwriters Lab File #E52744

V_E

.130 (3.30)

.150 (3.81)

•

VDE #0884, Available with Option 1

18°

4°

DESCRIPTION

.114 (2.90)

.130 (3.0)

typ.

.031 (0.80) min.

The CNY17 is an optically coupled pair consisting

of a Gallium Arsenide infrared emitting diode opti-

cally coupled to a silicon NPN phototransistor.

3°–9°

.010 (.25)

typ.

.300–.347

.031 (0.80)

.035 (0.90)

.018 (0.45)

.022 (0.55)

.100 (2.54) typ.

(7.62–8.81)

Signal information, including a DC level, can be trans-

mitted by the device while maintaining a high degree

of electrical isolation between input and output.

Characteristics (T =25°C)

The CNY17 can be used to replace relays and trans-

formers in many digital interface applications, as well

as analog applications such as CRT modulation.

Parameter

Emitter

Symbol

Values

Unit Condition

Maximum Ratings (T =25°C)

Emitter

Forward Voltage

V_F

1.25

(≤1.65)

I_F= 60 mA

Reverse Voltage .............................................6.0 V

Forward Current .......................................... 60 mA

Surge Current (t≤10 µs)................................. 2.5 A

Power Dissipation......................................100 mW

Detector

Collector-Emitter Breakdown Voltage..............70 V

Emitter-Base Breakdown Voltage...................7.0 V

Collector Current ......................................... 50 mA

Collector Current (t <1.0 ms)..................... 100 mA

Power Dissipation......................................150 mW

Package

Breakdown Voltage

Reverse Current

Capacitance

V_BR

I_R

≥6.0

I_R= 10 mA

V_R= 6.0 V

V_R=0 V, f=1.0 MHz

—

0.01 (≤10)

µA

—

Thermal Resistance

Detector

R_thjamb

750

K/W

Capacitance

C_CE

C_CB

C_EB

5.2

6.5

7.5

V_CE=5.0 V, f=1.0 MHz

V_CB=5.0 V, f=1.0 MHz

V_EB=5.0 V, f=1.0 MHz

Isolation Test Voltage (between emitter &

detector referred to climate DIN 50014,

part 2, Nov. 74) (t=1 sec)...................5300 V

Thermal Resistance

R_thjamb

500

K/W

—

Package

RMS

Creepage Distance ................................. ≥7.0 mm

Clearance Distance................................. ≥7.0 mm

Isolation Thickness between

Emitter and Detector.............................≥0.4 mm

Comparative Tracking Index per DIN IEC 112/

VDE0303, part 1 ...........................................175

Collector-Emitter

Saturation Voltage

I_F=10 mA,

I_C=2.5 mA

V_CEsat

0.25 (≤0.4)

Coupling Capacitance C_C

0.6

—

Isolation Resistance

V =500 V, T =25°C.............................. ≥10

Ω

V =500 V, T =100°C............................ ≥10

Storage Temperature...................–55°C to +150°C

Operating Temperature ...............–55°C to +100°C

Junction Temperature...................................100°C

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane ≥1.5 mm) .........260°C

Document Number: 83606

Revision 17-August-01

www.vishay.com

2–68

12 3 4

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