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CMT2301M233 PDF预览

CMT2301M233

更新时间: 2024-11-16 06:48:15
品牌 Logo 应用领域
虹冠电子 - CHAMP /
页数 文件大小 规格书
7页 245K
描述
P-CHANNEL ENHANCEMENT MODE MOSFET

CMT2301M233 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.69配置:Single
最大漏极电流 (Abs) (ID):2.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.25 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

CMT2301M233 数据手册

 浏览型号CMT2301M233的Datasheet PDF文件第2页浏览型号CMT2301M233的Datasheet PDF文件第3页浏览型号CMT2301M233的Datasheet PDF文件第4页浏览型号CMT2301M233的Datasheet PDF文件第5页浏览型号CMT2301M233的Datasheet PDF文件第6页浏览型号CMT2301M233的Datasheet PDF文件第7页 
CMT2301  
P-CHANNEL ENHANCEMENT MODE MOSFET  
GENERAL DESCRIPTION  
FEATURES  
The CMT2301 is the P-Channel logic enhancement mode  
power field effect transistors are produced using high cell  
density, DMOS trench technology.  
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-20V/-2.3A ,RDS(ON)=130 m@VGS=-4.5V  
-20V/-1.9A ,RDS(ON)=190 m@VGS=-2.5V  
Super high density cell design for extremely low RDS(ON)  
Exceptional on-resistance and maximum DC current  
capability  
This high density process is especially tailored to minimize  
on-state resistance.  
These devices are particularly suited for low voltage  
application such as cellular phone and notebook computer  
power management and other battery powered circuits, and  
low in-line power loss are needed in a very small outline  
surface mount package.  
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SOT-23-3 package design  
APPLICATIONS  
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Power Management in Notebook  
Portable Equipment  
Battery Powered System  
DC/DC Converter  
Load Switch  
DSC  
LCD Display inverter  
PIN CONFIGURATION  
SYMBOL  
SOT-23-3  
Top View  
D
3
G
S
2
1
P-Channel MOSFET  
ORDERING INFORMATION  
Part Number  
Package  
SOT-23-3  
SOT-23-3  
CMT2301M233  
CMT2301GM233*  
*Note: G : Suffix for Pb Free Product  
2006/10/11 Rev1.2  
Champion Microelectronic Corporation  
Page 1  

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