CMT20N50
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination ꢀ
scheme to provide enhanced voltage-blocking capability ꢀ
without degrading performance over time. In addition, this ꢀ
advanced MOSFET is designed to withstand high energy in
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
ꢀ
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
efficient design also offers a drain-to-source diode with a ꢀ
fast recovery time. Designed for high voltage, high speed ꢀ
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
TO-3P
D
Top View
G
S
N-Channel MOSFET
2
3
1
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
- Pulsed
Symbol
ID
Value
20
60
Unit
A
IDM
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
VGS
VGSM
PD
±20
±40
250
V
V
W
Derate above 25℃
2.00
-55 to 150
276
W/℃
℃
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
(VDD = 100V, VGS = 10V, IL = 20A, L = 1.38mH, RG = 25Ω)
Thermal Resistance - Junction to Case
- Junction to Ambient
TJ, TSTG
EAS
mJ
θJC
θJA
TL
0.50
40
260
℃/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
(1) Pulse Width and frequency is limited by TJ(max) and thermal response
℃
2002/07/24 Preliminary
Champion Microelectronic Corporation
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