Datasheet > CMP3031F2

CMP3031F2

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1232K
描述
DFN2x2

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CMP3031F2 数据手册

CMP3031F2

P-Channel 30V (D-S) Power MOSFET

Description

Applications

CMP3031F2 is the P-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: -30V

ID: -9.4A

Marking Code = P3031F2

Date Code = XXXX

P3031F2

XXXX

RDS_ON(@VGS=-10V) : < 25mΩ

RDS_ON(@VGS=-4.5V) : < 35mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

PIN 1

Equivalent Circuit and Pin Configuration

Ordering Information

DFN2020-6

Part Number

Packaging

3000/Tape & Reel

Reel Size

CMP3031F2

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

-30

Unit

Drain-source Voltage

Gate-source Voltage

VGS

±20

TA=25°C

TA=70°C

-9.4

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

-7.5

IDM

-37.6

1.4

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

RθJA

°C/W

°C

TJ,TSTG

-55 to +150

Sep. 2021, Rev. 1.1

1 of 5

www.appliedpowermicro.com

12 3 4 5

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