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CMM3020-BD_10

更新时间： 2024-09-21 09:27:39
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MIMIX /
页数 文件大小 规格书
8页 1659K
描述
30.0 kHz-20.0 GHz GaAs MMIC

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30.0 kHz-20.0 GHz GaAs MMIC  
Distributed Amplifier  
May 2010 - Rev 08-May-10  
CMM3020-BD  
Chip Device Layout  
Features  
Ultra Wide Band Driver Amplifier  
Low Gain Ripple  
Positive Gain Slope  
9.0 dB Small Signal Gain  
+23.0 dBm P1dB Compression Point  
+35.0 dBm Third Order Intercept  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s distributed 30 kHz-20.0 GHz GaAs MMIC  
distributed amplifier has a small signal gain of 9.0 dB with a  
+23.0 dBm P1dB output compression point.This MMIC uses  
Mimix Broadband’s GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface  
passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow either a  
conductive epoxy or eutectic solder die attach process.This  
device is well suited for Test Instrumentation, Military, Space,  
Microwave Point-to-Point Radio, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1)  
Gate Voltage (Vg)  
Input Power (Pin)  
+12.0 VDC  
350 mA  
-5V  
+23.0 dBm  
Storage Temperature (Tstg) -65 to +165 ºC  
Operating Temperature (Ta) -55 to +85 ºC  
Channel Temperature (Tch)1 +175 ºC  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
0.00003  
Typ.  
-
12.0  
12.0  
9.0  
Max.  
20.0  
-
-
Frequency Range (f)  
Input Return Loss (S11)3  
8.0  
7.0  
7.0  
Output Return Loss (S22)3  
Small Signal Gain (S21)3  
-
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Output Power for 1dB Compression (P1dB)2  
Output Third Order Intermods (OIP3)2  
Saturated Output Power (Psat)2  
Drain Bias Voltage (Vd)  
dB  
dB  
-
-
-
-
+/-1.0  
35.0  
+23.0  
+35.0  
+26.0  
+8.0  
-0.5  
-
-
-
-
-
dBm  
dBm  
dBm  
VDC  
VDC  
mA  
-
-
-1.5  
-
+9.0  
0.0  
275  
Gate Bias Voltage (Vg)  
Supply Current (Id) (Vd=8.0V,Vg=-0.5V Typical)  
250  
100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant  
with an 80% pass rate required.  
(2) Optional high power bias Vd=9.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3.  
(3) Unless otherwise indicated, Min./Max. over 2.0-20.0 GHz and biased at Vd=8.0V.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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