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CMM4000-BD-000X PDF预览

CMM4000-BD-000X

更新时间: 2024-02-12 01:49:43
品牌 Logo 应用领域
MIMIX 放大器
页数 文件大小 规格书
7页 178K
描述
2.0-18.0 GHz GaAs MMIC Low Noise Amplifier

CMM4000-BD-000X 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:DIE OR CHIP
Reach Compliance Code:compliant风险等级:5.12
特性阻抗:50 Ω构造:COMPONENT
增益:7 dB最大输入功率 (CW):20 dBm
JESD-609代码:e4功能数量:1
最大工作频率:18000 MHz最小工作频率:2000 MHz
最高工作温度:85 °C最低工作温度:-55 °C
封装等效代码:DIE OR CHIP电源:5 V
射频/微波设备类型:WIDE BAND LOW POWER子类别:RF/Microwave Amplifiers
最大压摆率:130 mA技术:GAAS
端子面层:Gold (Au)Base Number Matches:1

CMM4000-BD-000X 数据手册

 浏览型号CMM4000-BD-000X的Datasheet PDF文件第2页浏览型号CMM4000-BD-000X的Datasheet PDF文件第3页浏览型号CMM4000-BD-000X的Datasheet PDF文件第4页浏览型号CMM4000-BD-000X的Datasheet PDF文件第5页浏览型号CMM4000-BD-000X的Datasheet PDF文件第6页浏览型号CMM4000-BD-000X的Datasheet PDF文件第7页 
2.0-18.0 GHz GaAs MMIC  
Low Noise Amplifier  
July 2006 - Rev 06-Jul-06  
CMM4000-BD  
Chip Device Layout  
Features  
Self Bias Architecture  
On-Chip Drain Bias Coil/DC Blocking  
9.0 dB Small Signal Gain  
4.5 dB Noise Figure  
+19.0 dBm P1dB Compression Point  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s 2.0-18.0 GHz GaAs MMIC  
Absolute Maximum Ratings  
distributed low noise amplifier has a small signal gain  
of 9.0 dB with a noise figure of 4.5 dB across the band.  
This MMIC uses Mimix Broadband’s 0.3 µm GaAs  
PHEMT device model technology, and is based upon  
optical beam lithography to ensure high repeatability  
and uniformity.The chip has surface passivation to  
protect and provide a rugged part with backside via  
holes and gold metallization to allow either a  
conductive epoxy or eutectic solder die attach process.  
This device is well suited for fiber optic, microwave  
radio, military, space, telecom infrastructure, test  
instrumentation and VSAT applications.  
Supply Voltage (Vd)  
Supply Current (Id)  
Input Power (Pin)  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
+8.5 VDC  
175 mA  
+20 dBm  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
2.0  
-
-
Typ.  
-
12.0  
15.0  
9.0  
Max.  
18.0  
-
-
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
-
-
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Noise Figure (NF)  
dB  
dB  
dB  
-
-
-
+/-0.5  
20.0  
4.5  
-
-
-
Output Power for 1 dB Compression (P1dB)  
Output Second Order Intercept Point (OIP2)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd)  
dBm  
dBm  
dBm  
VDC  
mA  
-
-
-
+19.0  
+39.0  
+29.0  
+5.0  
115  
-
-
-
+4.5  
100  
+7.0  
130  
Supply Current (Id) (Vd=5.0V)  
100% on-wafer DC testing and 100% RF wafer qualification.Wafer qualification includes sample testing from each quadrant  
with an 80% pass rate required.  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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