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CMM0014-BD_06

更新时间： 2024-11-27 03:26:03
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MIMIX 放大器功率放大器
页数 文件大小 规格书
3页 619K
描述
2.0-22.0 GHz GaAs MMIC Power Amplifier

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CMM0014-BD_06 数据手册

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2.0-22.0 GHz GaAs MMIC  
Power Amplifier  
August 2006 - Rev 02-Aug-06  
CMM0014-BD  
Chip Diagram  
2.0 to 22.0 GHz  
GaAs MMIC  
Power Amplifier  
Advanced Product Information  
August 2004  
(1 of 3)  
Features  
Small Size: 45 x 92 mils  
High Gain: 11.5 dB, Nom  
Medium Power: +25 dBm, Typ P1dB @14 GHz  
Directly Cascadable – Fully Matched  
Unconditionally Stable  
Single Bias Operation  
Bias Control  
pHEMT Technology  
Silicon Nitride Passivation  
1
Specifications (TA = 25°C, Vdd = 8V)  
Parameters  
Units  
Min  
Typ  
Max  
Frequency Range  
Small Signal Gain  
Gain Flatness  
GHz  
dB  
dB  
2.0  
10.0  
22.0  
13.5  
0.8  
Gain Variation (-40°C to +85°C)  
Input Return Loss  
Output Return Loss  
dB  
dB  
dB  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dB  
0.35  
-10.0  
-9.0  
1
Power Output (@1 dB Gain Compression)  
22.5  
24.0  
P1dB Variation (over operating frequency)  
P1dB Variation (-40°C to +85°C)  
Saturated Output Power  
Second Order Intercept Point @ 10 GHz  
Third Order Intercept Point @ 10 GHz  
Noise Figure  
4.5  
0.25  
29.0  
48.0  
37.5  
7.5  
340  
33.0  
Current  
mA  
°C/W  
250  
295  
Thermal Resistance  
2
Stability  
Unconditionally Stable  
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 3).  
2. Stability factor measured on-wafer.  
Die Attach and Bonding Procedures  
Absolute Maximum Ratings  
Parameter  
Rating  
Die Attach: Eutectic die attach is recommended. For eutec-  
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage  
Temperature: 290°C, 5°C; Handling Tool: Tweezers; Time: 1  
min or less.  
Drain Voltage  
Drain Current  
7V (min.) / 9V (max.)  
350 mA  
Continuous Power Dissipation  
Input Power  
Storage Temperature  
Channel Temperature  
Operating Backside Temperature  
2.8 W  
+20 dBm  
-50°C to +150°C  
+175°C  
-40 to (see note 2)°C  
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-  
stressed); Thermocompression bonding is preferred over  
thermosonic bonding. For thermocompression bonding:  
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;  
Bonding Tip Pressure: 18 to 40 gms depending on size of  
wire.  
Notes: 1. Operation outside these limits can cause permanent damage.  
2. Calculation maximum operating temperature:  
Tmax = 175–(Pdis [W] x 33.0) [°C].  
Page 1 of 3  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123

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