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CM800HA-34H PDF预览

CM800HA-34H

更新时间: 2024-10-30 03:25:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率控制双极性晶体管局域网高功率电源
页数 文件大小 规格书
4页 60K
描述
HIGH POWER SWITCHING USE INSULATED TYPE

CM800HA-34H 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:unknown风险等级:5.24
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):800 A集电极-发射极最大电压:1700 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):8300 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
VCEsat-Max:3.58 VBase Number Matches:1

CM800HA-34H 数据手册

 浏览型号CM800HA-34H的Datasheet PDF文件第2页浏览型号CM800HA-34H的Datasheet PDF文件第3页浏览型号CM800HA-34H的Datasheet PDF文件第4页 
MITSUBISHI HVIGBT MODULES  
CM800HA-34H  
HIGH POWER SWITCHING USE  
INSULATED TYPE  
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules  
CM800HA-34H  
IC...................................................................800A  
VCES ....................................................... 1700V  
Insulated Type  
1-element in a pack  
APPLICATION  
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.  
OUTLINE DRAWING & CIRCUIT DIAGRAM  
Dimensions in mm  
130  
114  
4 - M8 NUTS  
57±0.25  
57±0.25  
C
C
C
C
C
G
E
CM  
E
E
E
E
E
CIRCUIT DIAGRAM  
G
C
16.5  
3 - M4 NUTS  
6 - φ 7 MOUNTING HOLES  
2.5  
5
18.5  
61.5  
35  
11  
18  
14.5  
LABEL  
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)  
Mar. 2003  

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