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CM07N65TP PDF预览

CM07N65TP

更新时间: 2024-05-23 22:21:34
品牌 Logo 应用领域
应能微 - APPLIED POWER /
页数 文件大小 规格书
5页 1359K
描述
TO-220

CM07N65TP 数据手册

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CM07N65TP/F  
N-Channel 650V (D-S) Power MOSFET  
Description  
Applications  
The CM07N65TP/F is the N-Channel enhancement mode  
power field effect transistors with high cell density, high  
voltage planar technology. This high density process and  
design have been optimized switching performance and  
especially tailored to minimize on-state resistance.  
AC/DC load switch  
SMPS  
Notebooks and Handhelds adapter  
UPS Power  
Marking Information  
Features  
X=Package type  
VDS: 650V  
XXXX = Marking Code  
ID (@VGS=10V): 7A  
07N65TX  
XXXX  
RDSON (@VGS=10V) : < 1.3Ω  
High density cell design for extremely low RDSON  
Excellent on-resistance and DC current capability  
Equivalent Circuit and Pin Configuration  
Ordering Information  
P/N  
Packaging  
Tube  
Remark  
ROHS  
ROHS  
Package Type  
TO-220  
TO-220  
TO-220F  
CM07N65TP  
CM07N65TF  
TO-220F  
Tube  
Absolute Maximum Ratings (Tc=25 unless otherwise noted)  
Maximum  
Parameter  
Drain-source Voltage  
Symbol  
Unit  
CM07N65TP CM07N65TF  
VDS  
VGS  
650  
±30  
V
V
Gate-source Voltage  
Tc=25°C  
7
7(4)  
4.3(4)  
29(4)  
48  
A
Continuous Drain Current (1)  
Pulsed Drain Current(2)  
Total Power Dissipation (3)  
ID  
Tc=100°C  
4.3  
29  
A
IDM  
PD @ Tc=25°C  
Derating Factor above 25°C  
RθJC  
A
147  
1.2  
0.85  
W
0.4  
W/°C  
°C/W  
°C  
Thermal Resistance Junction-to-Case (3)  
2.6  
Junction and Storage Temperature Range  
TJ,TSTG  
-55 to +150  
Apr. 2023, Rev. 1.0  
1 of 5  
www.appliedpowermicro.com  

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