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CLL4150LEADFREE PDF预览

CLL4150LEADFREE

更新时间: 2024-11-30 20:00:15
品牌 Logo 应用领域
CENTRAL 二极管
页数 文件大小 规格书
2页 298K
描述
Rectifier Diode, 1 Element, 0.3A, 50V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

CLL4150LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.2外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:0.3 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:MATTE TIN (315)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:10
Base Number Matches:1

CLL4150LEADFREE 数据手册

 浏览型号CLL4150LEADFREE的Datasheet PDF文件第2页 
CLL4150  
www.centralsemi.com  
SURFACE MOUNT  
HIGH SPEED SILICON  
SWITCHING DIODE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CLL4150  
type is an ultra-high speed silicon switching diode  
manufactured by the epitaxial planar process, in a  
hermetically sealed glass surface mount package,  
designed for high speed switching applications.  
MARKING: CATHODE BAND  
SOD-80 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
A
Continuous Reverse Voltage  
Peak Repetitive Reverse Voltage  
Continuous Forward Current  
V
R
50  
50  
V
V
V
RRM  
I
300  
mA  
mA  
A
F
Peak Repetitive Forward Current  
Peak Forward Surge Current, tp=1.0μs  
Peak Forward Surge Current, tp=1.0s  
Power Dissipation  
I
600  
FRM  
I
4.0  
FSM  
I
1.0  
A
FSM  
P
500  
mW  
°C  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
350  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V =50V  
R
100  
nA  
V
R
BV  
I =5.0μA  
75  
R
R
V
F
I =1.0mA  
F
0.54  
0.66  
0.76  
0.82  
0.87  
0.62  
0.74  
0.86  
0.92  
1.0  
V
V
I =10mA  
V
F
F
V
F
I =50mA  
F
V
V
I =100mA  
V
F
F
V
F
I =200mA  
F
V
C
V =0, f=1.0 MHz  
4.0  
pF  
ns  
T
R
t
I =I =10mA, R =100Ω, Rec. to 1.0mA  
4.0  
rr  
R
F
L
R3 (8-January 2010)  

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