Datasheet > CJU4828

CJU4828

更新时间： 2024-09-29 14:53:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1873K
描述
TO-252-2L

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数据手册

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CJU4828 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU4828 N-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

TO-252-2L

37mΩ 10V

4.5A

60V

60mΩ 4.5V

DESCRIPTION

1. GATE

2. DRAIN

3. SOURCE

The CJU4828 uses advanced trench technology and design to

provide excellent R_DS(ON)with low gate charge. It can be used in a

wide variety of applications.

FEATURES



High density cell design for ultra low R_DS(on)

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS



Special process technology for high ESD capability

Excellent package for good heat dissipation

APPLICATIONS



Hard switched and high frequency circuits



Power switching application



Uninterruptible power supply

MARKING

EQUIVALENT CIRCUIT

U4828= Device code

Solid dot = Green molding compound device,

if none, the normal device

XXXX=Code

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

Unit

Gate-Source Voltage

V_GS

±20

4.5

Continuous Drain Current

Pulsed Drain Current

I_D

I_DM

(1)

Single Pulsed Avalanche Energy

E_AS

1.25

Power Dissipation

P_D

R_θJA

T_J

Thermal Resistance from Junction to Ambient

Junction Temperature

100

℃/W

℃

150

Storage Temperature Range

T_stg

T_L

-55 ~+150

260

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)

(1).E_AScondition: V_DD=50V,L=0.5mH, R_G=25Ω, Starting T_J= 25°C

www.jscj-elec.com

Rev. - 1.1

12 3 4 5

中文翻译

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