Datasheet > CJU65P06

CJU65P06

更新时间： 2024-09-29 14:54:39

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1786K
描述
TO-252-2L

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CJU65P06 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

CJU65P06

P-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

TO-252-2L

-65A

-60V

13mΩ -10V

GENERAL DESCRIPTION

The CJU65P06 uses advanced trench technology and design to provide excellent

1. GATE

2. DRAIN

3. SOURCE

R_DS(on)with low gate charge. It can be used in a wide variety of applications.

FEATURE

APPLICATION



Advanced trench process technology



Power management in notebook computer

Reliable and rugged

Portable equipment and battery powered systems

High density cell design for ultra low On-Resistance

EQUIVALENT CIRCUIT

MARKING

U65P06 = Device code.

Solid dot = Green molding compound device,

if none, the normal device.

XXXX = Code.

U65P06

XXXX

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

-60

Unit

Gate-Source Voltage

V_GS

±20

-65

①

Continuous Drain Current

I_D

②

Pulsed Drain Current

I_DM

-260

480

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

①

P_D

120

100

⑥

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

℃/W

℃

①

1.04

R_θJC

-55~+150

T ,

Operating Junction and

T_stg

Storage Temperature Range

www.jscj-elec.com

Rev. - 1.0

12 3 4 5

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