Datasheet > CJW1012

CJW1012

更新时间： 2024-01-24 17:23:13

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鲁光 - LGE		/
页数	文件大小	规格书
3页	723K
描述
N-Channel Power MOSFET

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中文翻译

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数据手册

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CJW1012 数据手册

CJW1012

N-Channel Power MOSFET

SOT-323

FEATURE

z High-Side Switching

z Low On-Resistance

z Low Threshold

z Fast Switching Speed

z ESD protected up to 2kV

APPLICATIONS

z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories

z Battery Operated Systems

z Power Supply Converter Circuits

Dimensions in inches and (millimeters)

z Load/Power Switching Cell Phones, Pagers

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DSS

Value

Unit

Drain-Source voltage

Gate-Source Voltage

V_GS

±12

Drain Current-Continuous

I_D(DC)

500

℃/W

℃

Drain Current -Pulsed(note1)

I_DM(pulse)

1000

150

Power Dissipation (note 2 , T_a=25℃)

Maximum Power Dissipation (note 3 , T_c=25℃)

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

Storage Temperature

P_D

275

R_θJA

R_θJC

T_j

833

455

150

Junction Temperature

T_stg

-55 ~+150

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