Datasheet > CJU55N02

CJU55N02

更新时间： 2023-12-06 20:09:53

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
6页	3107K
描述
TO-252-2L

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数据手册

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CJU55N02 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate MOSFETS

TO-252-2L

CJU55N02 N-Channel Power MOSFET

I_D

V_(BR)DSS

R_DS(on)TYP

@10V

5.8mΩ

20V

55 A

7.0mΩ 4.5V

1. GATE

2. DRAIN

3. SOURCE

DESCRIPTION

The CJU55N02 uses advanced trench technology and design

to provide excellent R_DS(ON)with low gate charge. It can be used in a

wide variety of applications

FEATURE

APPLICATION

Power switching application



Excellent package for good heat dissipation

Ultra low gate charge

Low reverse transfer capacitance

Fast switching capability

Avalanche energy specified

MARKING

EQUIVALENT CIRCUIT

U55N02 = Device code.

Solid dot = Green molding compound

device if none, the normal device.

XXXX = Code.

U55N02

XXXX

ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

±12

V_GS

①

I_D

②

I_DM

200

③

Single Pulsed Avalanche Energy

E_AS

①

Maximum Power Dissipation

P_D

⑥

R_θJA

℃/W

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

100

2.27

①

R_θJC

℃/W

℃

Operating Junction and

Storage Temperature Range

T ,

-55~+150

T_stg

Rev. - 2.0

www.jscj-elec.com

12 3 4 5 6

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