Datasheet > CJP130SN10

CJP130SN10

更新时间： 2024-11-28 14:55:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1824K
描述
TO-220-3L-C

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CJP130SN10 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L-C Plastic-Encapsulate MOSFETS

CJP130SN10

N-Channel Power MOSFET

TO-220-3L-C

V_(BR)DSS

R_DS(on)TYP

4.3mΩ@10V

I_D

100V

130A

DESCRIPTION

1. GATE

2. DRAIN

3. SOURCE

The CJP130SN10 uses shielded gate trench technology and

design to provide excellent R_DS(ON)with low gate charge. It can be

used in a wide variety of applications

FEATURES

APPLICATIONS



Low R_DS(on)

Low Gate Charge



High efficiency power supply

Secondary synchronus rectifier

MARKING

EQUIVALENT CIRCUIT

P130SN10 = Device code.

Solid dot = Green molding compound device,

if none, the normal device.

XXXX = Code.

P130SN10

XXXX

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Parameter

Drain-Source Voltage

Symbol

V_DS

Limit

100

±20

130

390

600

Unit

Gate-Source Voltage

V_GS

①

Continuous Drain Current

I_D

②

Pulsed Drain Current

I_DM

③

Single Pulsed Avalanche Energy

Power Dissipation

E_AS

①

P_D

189

62.5

Thermal Resistance from Junction to Ambient

Thermal Resistance from Junction to Case

R_θJA

℃/W

℃

①

0.66

R_θJC

-55~+150

T ,

Operating Junction and

T_stg

Storage Temperature Range

Rev. - 2.0

www.jscj-elec.com

12 3 4 5

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