是否Rohs认证: | 不符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | TO-237 | 包装说明: | CYLINDRICAL, O-PBCY-W3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.83 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 200 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | JEDEC-95代码: | TO-237AA |
JESD-30 代码: | O-PBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CIL858 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237 | |
CIL858GR | CDIL |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-237 | |
CIL858O | CDIL |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-237 | |
CIL858Y | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR | |
CIL859 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 | |
CIL859GR | CDIL |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237 | |
CIL859O | CDIL |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237 | |
CIL859Y | CDIL |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237 | |
CIL911 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106 | |
CIL912 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106 |