Datasheet > CGY888C

CGY888C

更新时间： 2024-11-21 06:47:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
7页	51K
描述
34 dB, 870 MHz GaAs push-pull forward amplifier

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CGY888C 技术参数

CGY888C

34 dB, 870 MHz GaAs push-pull forward ampliﬁer

Rev. 03 — 14 October 2009

Product data sheet

1. Product proﬁle

1.1 General description

Hybrid ampliﬁer module in a SOT115J package, operating at a supply voltage of 24 V

Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs

MMIC.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features

I High gain

I Excellent linearity

I Superior levels of ESD protection

I Extremely low noise

I Excellent return loss properties

I Gain compensation over temperature

I Rugged construction

I Unconditionally stable

I Thermally optimized design

I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

I Integrated ring wave surge protection

1.3 Applications

I CATV systems operating in the 40 MHz to 870 MHz frequency range

12 3 4 5 6 7

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