Datasheet > CGH25120F

CGH25120F

更新时间： 2024-12-02 01:15:19

品牌	Logo	应用领域
科锐 - CREE		LTE
页数	文件大小	规格书
12页	1699K
描述
120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

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CGH25120F 数据手册

CGH25120F

120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE

Cree’s CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally for high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA ampliﬁer

applications. The transistor is supplied in a ceramic/metal ﬂange package.

Typical Performance Over 2.3-2.7GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

2.3 GHz

2.4 GHz

2.5 GHz

2.6 GHz

2.7 GHz

Units

Gain @ 43 dBm

12.5

12.8

13.1

13.5

13.6

ACLR @ 43 dBm

Drain Efﬁciency @ 43 dBm

Note:

-32.7

26.5

-34.0

28.0

-32.5

30.0

-29.5

32.5

-25.8

34.5

dBc

Measured in the CGH25120F-AMP ampliﬁer circuit, under equivalent 802.16e WiMAX signal, 10 MHz Bandwidth,

PAR = 9.6 dB @ 0.01 % Probability on CCDF.

Features

•

2.3 - 2.7 GHz Operation

13 dB Gain

-32 dBc ACLR at 20 W P_AVE

30 % Efﬁciency at 20 W P_AVE

High Degree of DPD Correction Can be Applied

Subject to change without notice.

www.cree.com/wireless

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