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CG2H80060D PDF预览

CG2H80060D

更新时间: 2024-11-24 01:24:55
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
8页 594K
描述
60 W, 8.0 GHz, GaN HEMT Die

CG2H80060D 数据手册

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CG2H80060D  
60 W, 8.0 GHz, GaN HEMT Die  
Cree’s CG2H80060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has super
propertiescomparedtosiliconorgalliumarsenide,includinghigherbreakdownvoltage,highersaturatedelectro
drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidth
compared to Si and GaAs transistors.  
FEATURES  
APPLICATIONS  
•ꢀ 15 dB Typical Small Signal Gain at 4 GHz  
•ꢀ 2-Way Private Radio  
•ꢀ 12 dB Typical Small Signal Gain at 8 GHz  
•ꢀ 60 W Typical PSAT  
•ꢀ BroadbandꢀAmplifiers  
•ꢀ Cellular Infrastructure  
•ꢀ 28 V Operation  
•ꢀ Test Instrumentation  
•ꢀ High Breakdown Voltage  
•ꢀ High Temperature Operation  
•ꢀ Up to 8 GHz Operation  
•ꢀ HighꢀEfficiency  
•ꢀ ClassꢀA,ꢀAB,ꢀLinearꢀamplifiersꢀsuitableꢀforꢀ  
OFDM, W-CDMA, EDGE, CDMA waveforms  
Packaging Information  
•ꢀ Bare die are shipped in Gel-Pak® containers.  
•ꢀ Non-adhesive tacky membrane immobilizes die during shipment.  
Subject to change without notice.  
www.cree.com/rf  
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