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CFD1275AQ PDF预览

CFD1275AQ

更新时间: 2024-11-15 03:25:19
品牌 Logo 应用领域
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页数 文件大小 规格书
3页 106K
描述
NPN SILICON PLANAR DALINGTON POWER TRANSISTORS

CFD1275AQ 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:compliant风险等级:5.61
Base Number Matches:1

CFD1275AQ 数据手册

 浏览型号CFD1275AQ的Datasheet PDF文件第2页浏览型号CFD1275AQ的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
NPN SILICON PLANAR DALINGTON POWER TRANSISTORS  
CFD1275, CFD1275A  
TO-220FP Fully Isolated  
Plastic Package  
Complementary CFB949, CFB949A  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)  
CFD1275  
CFD1275A  
UNIT  
V
DESCRIPTION  
SYMBOL  
VCBO  
60  
60  
80  
80  
Collector Base Voltage  
Collector Emitter Voltage  
VCEO  
VEBO  
V
5
3500  
1500  
4
V
Emitter Base Voltage  
VRMS  
VRMS  
** VISOL (a)  
RMS Isolation Voltage (for 1sec, R.H.  
<30%, Ta = 25oC)  
(b)  
ICP  
A
A
Collector Current Peak  
Collector Current  
IC  
2
Collector Power Dissipation @Tc=25oC  
PC  
35  
W
W
@Ta=25oC  
2
Tj  
150  
ºC  
ºC  
Junction Temperature  
Tstg  
- 55 to +150  
Storage Temperature Range  
** RMS Isolation Voltage: (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package  
in Screw Mounting Position (for 1sec, R.H.<30%, Ta=25oC; Pulse Test: Pulse Width <300ms, Duty Cycle<2%)  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
MIN TYP MAX UNIT  
I
VCB =60V, IE=0, CFD1275  
Collector Cut Off Current  
1.0  
1.0  
2.0  
2.0  
2.0  
mA  
mA  
mA  
mA  
mA  
CBO  
VCB =80V, IE=0, CFD1275A  
I
VCE =30V, IB=0, CFD1275  
VCE =40V, IB=0, CFD1275A  
VEB =5V, IC=0  
Collector Cut Off Current  
CEO  
I
Emitter Cut Off Current  
Collector Emitter Voltage  
EBO  
VCEO  
IC=30mA, IB=0  
CFD1275  
CFD1275A  
60  
80  
V
V
hFE  
*hFE  
VCE(sat)  
VBE  
VCE =4V, IC =1A  
DC Current Gain  
1000  
1000  
VCE =4V, IC =2A  
10000  
2.5  
IC =2A, IB =8mA  
VCE =4V, IC =2A  
Collector Emitter Saturation Voltage  
Base Emitter On Voltage  
Turn On Time  
V
2.8  
V
ton  
0.5  
4.0  
1.0  
ms  
ms  
ms  
tstg  
IC =2A, IB1 = - IB2=8mA  
Storage Time  
tr  
Fall Time  
*hFE Classification  
R : 1000 - 2500  
Q : 2000 - 5000  
P : 4000 - 10000  
Data Sheet  
Page 1 of 3  
Continental Device India Limited  

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