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CF5073E2-1 PDF预览

CF5073E2-1

更新时间: 2024-01-30 20:20:46
品牌 Logo 应用领域
精工 - SEIKO /
页数 文件大小 规格书
14页 92K
描述
Oscillator,

CF5073E2-1 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.57
Base Number Matches:1

CF5073E2-1 数据手册

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CF5073 series  
CF5073B×  
V
= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = 40 to +85°C, unless otherwise noted.  
C SS  
DD  
Rating  
Typ  
2.75  
0.2  
Parameter  
Symbol  
Conditions  
Unit  
Min  
2.5  
Max  
HIGH-level output voltage  
LOW-level output voltage  
V
Q: Measurement circuit 1, I = 6mA  
OH  
V
OH  
V
Q: Measurement circuit 1, I = 6mA  
OL  
0.4  
10  
10  
V
OL  
V
= V  
ꢀA  
ꢀA  
V
OH  
OL  
DD  
Q: Measurement circuit 6,  
INHN = LOW  
Output leakage current  
I
Z
V
= V  
SS  
HIGH-level input voltage  
LOW-level input voltage  
V
INHN  
INHN  
0.7V  
IH  
DD  
V
0.3V  
V
IL  
DD  
CF5073B1  
9
22  
mA  
mA  
mA  
mA  
kΩ  
kΩ  
kΩ  
kΩ  
Measurement circuit 2, load  
circuit 1, INHN = open,  
C = 15pF,  
CF5073B2  
8
21  
Current consumption  
I
DD  
L
CF5073B3  
7.5  
7.5  
100  
300  
0.72  
200  
20.5  
20.5  
180  
540  
0.94  
360  
f = 23MHz  
CF5073B4 to 6  
INHN pull-up resistance  
R
Measurement circuit 3  
50  
150  
0.50  
100  
UP  
R
f
Design value. A monitor pattern on a wafer is  
tested.  
R
D
Built-in resistance  
R
Measurement circuit 4  
B1  
Design value. A monitor pattern on a wafer is  
tested.  
R
50  
100  
180  
kΩ  
B2  
V
= 0.3V  
= 3.0V  
11.0  
2.3  
14.6  
4.0  
30  
18.2  
5.7  
pF  
pF  
pF  
pF  
pF  
C
C
Design value. A monitor  
pattern on a wafer is tested.  
C
V
V
Built-in capacitance  
C
25.5  
34  
34.5  
46  
G
Design value. A monitor pattern on a wafer is  
tested.  
C
40  
D
C
12.7  
15  
17.3  
C
SEIKO NPC CORPORATION —6  

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