Datasheet > CEU71A3

CEU71A3

更新时间： 2022-10-21 09:44:38

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	58K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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数据手册

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CEU71A3 数据手册

CED71A3/CEU71A3

ELECTRICAL CHARACTERISTICS (T

=25 C unless otherwise noted)

Typ Max

Parameter

Condition

Min

Unit

Symbol

DRAIN-SOURCE DIODE CHARACTERISTICS ^a

Diode Forward Voltage

GS = 0V, Is = 2.3A

0.9

1.3

Notes

a.Pulse Test:Pulse Width 300ĳs, Duty Cycle 2%.

b.Guaranteed by design, not subject to production testing.

VGS=10,8,6,4V

-55 C

V^GS=3V

25 C

Tj=125 C

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

1.80

3000

2500

2000

1500

1000

I^D=15A

VGS=10V

1.60

1.40

1.20

Ciss

Coss

Crss

1.00

500

0.80

0.60

100

125 150

-50 -25

VDS, Drain-to Source Voltage (V)

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation with

Temperature

Figure 3. Capacitance

6-69

1 234 5

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