Datasheet > CEP60N06G

CEP60N06G

更新时间： 2022-10-21 09:33:12

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	422K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP60N06G 数据手册

CEP60N06G/CEB60N06G

V_DS=48V

I_D=60A

10³R_DS(ON)Limit

10²

100µs

1ms

10ms

10¹

T_C=25 C

T_J=175 C

Single Pulse

10⁰

10^-1

10⁰

10¹

10²

Qg, Total Gate Charge (nC)

VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge

Figure 8. Maximum Safe

Operating Area

V^DD

toff

d(off)

d(on)

OUT

V^IN

90%

10%

90%

OUT

VGS

10%

INVERTED

R^GEN

90%

50%

10%

PULSE WIDTH

Figure 10. Switching Waveforms

Figure 9. Switching Test Circuit

10⁰

D=0.5

0.2

10^-1

0.1

PDM

0.05

0.02

0.01

1. Rθ JC (t)=r (t) * Rθ JC

2. Rθ JC=See Datasheet

3. TJM-TC = P* Rθ JC (t)

4. Duty Cycle, D=t1/t2

Single Pulse

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

Square Wave Pulse Duration (msec)

Figure 11. Normalized Thermal Transient Impedance Curve

1 2 34

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