Datasheet > CEP6601

CEP6601

更新时间： 2022-05-13 17:01:20

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	434K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CEP6601 数据手册

CEP6601/CEB6601

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-60V, -19A, R_DS(ON)= 86mΩ @V_GS= -10V.

R_DS(ON)= 125mΩ @V_GS= -4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-60

Gate-Source Voltage

±20

-19

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

-76

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.33

-55 to 150

W/ C

Operating and Store Temperature Range

TJ,Tstg

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

Rev .2 2010.July.

http://www.cetsemi.com

Details are subject to change without notice .

12 3 4

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