Datasheet > CEP6601

CEP6601

更新时间： 2022-05-13 17:01:20

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	434K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CEP6601 数据手册

CEP6601/CEB6601

Electrical Characteristics T = 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^b

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

V_DS= -60V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

-60

-1

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

Static Drain-Source

On-Resistance

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= -250µA

V_GS= -10V, I_D= -8A

V_GS= -4.5V, I_D= -6A

V_DS= -10V, I_D= -15A

-1

-3

mΩ

125

Forward Transconductance

Dynamic Characteristics ^c

Input Capacitance

C_iss

C_oss

C_rss

1135

V_DS= -30V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

t_d(on)

t_r

t_d(off)

t_f

V_DD= -30V, I_D= -1A,

V_GS= -10V, R_GEN= 6Ω

Q_g

22.6

2.4

5.7

29.4

V_DS= -30V, I_D= -3.5A,

V_GS= -10V

Q_gs

Q_gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

-19

V_SD

V_GS= 0V, I_S= -19A

-1.5

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

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