Datasheet > CEP6060R_06

CEP6060R_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	81K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CEP6060R_06 数据手册

CEP6060R/CEB6060R

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 60A, R_DS(ON)= 25mΩ @V_GS= 10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

CEB SERIES

TO-263(DD-PAK)

CEP SERIES

TO-220

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

144

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

Single Pulsed Avalanche Energy ^d

Single Pulsed Avalanche Current ^d

Operating and Store Temperature Range

100

P_D

0.7

W/ C

E_AS

I_AS

168

T_J,T_stg

-65 to 175

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

62.5

Rev 1. 2006.April

Specification and data are subject to change without notice .

http://www.cetsemi.com

4 - 110

12 3 4

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