Datasheet > CEP540N

CEP540N

更新时间： 2024-02-16 05:04:57

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	408K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CEP540N 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84

CEP540N 数据手册

CEP540N/CEB540N

CEF540N

Electrical Characteristics T = 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^b

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 100V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

100

-100

µA

I_GSSF

IGSSR

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

V_GS= V_DS, I_D= 250µA

V_GS= 10V, I_D= 18A

mΩ

On-Resistance

Dynamic Characteristics ^c

Forward Transconductance

Input Capacitance

g_FS

V_DS= 25V, I_D= 18A

1300

196

C_iss

C_oss

C_rss

V_DS= 25V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= 50V, I_D= 18A,

V_GS= 10V, R_GEN= 5.1Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

V_DS= 80V, I_D= 18A,

V_GS= 10V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

V_SD

V_GS= 0V, I_S= 18A

1.3

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.L = 1.9mH, I = 18A, V = 50V, R = 25Ω, Starting T = 25 C

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