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CEN-U07N PDF预览

CEN-U07N

更新时间: 2023-12-06 20:03:40
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 397K
描述
100V,2A,8.33W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

CEN-U07N 数据手册

 浏览型号CEN-U07N的Datasheet PDF文件第2页浏览型号CEN-U07N的Datasheet PDF文件第3页 
CEN-U05N CEN-U06N CEN-U07N NPN  
CEN-U55N CEN-U56N CEN-U57N PNP  
www.centralsemi.com  
COMPLEMENTARY  
SILICON POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CEN-U05N/U55N  
series devices are complementary silicon power  
transistors designed for general purpose audio amplifier  
applications.  
MARKING: FULL PART NUMBER  
TO-202-2 CASE  
APPLICATIONS:  
Designed for general purpose high  
voltage amplifiers and drivers  
FEATURES:  
High Collector-Emitter breakdown voltage  
CEN-U05N CEN-U06N CEN-U07N  
SYMBOL CEN-U55N CEN-U56N CEN-U57N UNITS  
MAXIMUM RATINGS: (T =25°C)  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
60  
80  
100  
V
CBO  
CEO  
EBO  
60  
80  
100  
V
4.0  
V
I
2.0  
A
C
P
8.33  
1.25  
-65 to +150  
100  
W
D
D
Power Dissipation (T =25°C)  
P
W
A
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
°C  
J
stg  
Θ
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
15  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=Rated V  
0.1  
μA  
CBO  
EBO  
CB  
EB  
CBO  
I
V
=4.0V  
100  
μA  
V
BV  
BV  
BV  
I =1.0mA (CEN-U05N, CEN-U55N)  
60  
80  
CEO  
CEO  
C
I =1.0mA (CEN-U06N, CEN-U56N)  
V
C
I =1.0mA (CEN-U07N, CEN-U57N) 100  
V
CEO  
C
V
V
V
I =250mA, I =10mA  
0.5  
0.35  
1.2  
V
CE(SAT)  
CE(SAT)  
BE(ON)  
FE  
C
B
I =250mA, I =25mA  
V
C
B
V
=1.0V, I =250mA  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=1.0V, I =50mA  
80  
50  
20  
50  
C
=1.0V, I =250mA  
FE  
C
=1.0V, I =500mA  
FE  
C
f
=5.0V, I =200mA, f=100MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
30  
ob  
E
R0 (23-June 2014)  

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