是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.26 |
最大集电极电流 (IC): | 2 A | 基于收集器的最大容量: | 8 pF |
集电极-发射极最大电压: | 40 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 4000 | JEDEC-95代码: | TO-202 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | VCEsat-Max: | 1.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CEN-U45N | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 2A I(C) | TO-202VAR |
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CEN-U45NLEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |
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CEN-U45PBFREE | CENTRAL |
获取价格 |
暂无描述 |
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CEN-U51 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 2A I(C) | TO-202 |
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CEN-U51A | CENTRAL |
获取价格 |
Power Transistors |
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CEN-U52 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 2A I(C) | TO-202 |
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CENU55 | CENTRAL |
获取价格 |
SILICON COMPLEMENTARY POWER TRANSISTORS |
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CEN-U55 | CENTRAL |
获取价格 |
Power Transistors |
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CEN-U55LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-202, Plastic/ |
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CEN-U55N | CENTRAL |
获取价格 |
60V,2A,8.33W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Swi |
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