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CEN-U45LEADFREE PDF预览

CEN-U45LEADFREE

更新时间: 2024-01-09 14:05:23
品牌 Logo 应用领域
CENTRAL 局域网放大器晶体管
页数 文件大小 规格书
2页 420K
描述
Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-202, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3

CEN-U45LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.26
最大集电极电流 (IC):2 A基于收集器的最大容量:8 pF
集电极-发射极最大电压:40 V配置:DARLINGTON
最小直流电流增益 (hFE):4000JEDEC-95代码:TO-202
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):10 W
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:1.5 V
Base Number Matches:1

CEN-U45LEADFREE 数据手册

 浏览型号CEN-U45LEADFREE的Datasheet PDF文件第2页 
CEN-U45  
www.centralsemi.com  
NPN SILICON  
DARLINGTON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CEN-U45 is a  
NPN silicon Darlington transistor designed for general  
purpose amplifier and driver applications where high  
gain and high power dissipation is required.  
MARKING: FULL PART NUMBER  
TO-202 CASE  
APPLICATIONS:  
FEATURES:  
• Designed for general purpose  
amplifiers and drivers  
• High Collector Current (2.0A)  
• High DC Current Gain (25K MIN)  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
50  
40  
CBO  
CEO  
V
V
V
V
40  
CES  
EBO  
V
12  
V
Continuous Collector Current  
Power Dissipation  
I
2.0  
A
C
P
2.0  
W
D
D
Power Dissipation (T =25°C)  
P
10  
W
C
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
62.5  
12.5  
°C  
J
stg  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
V
=30V  
100  
nA  
CBO  
EBO  
CB  
EB  
I
V
=10V  
100  
nA  
V
BV  
BV  
BV  
l =100μA  
50  
40  
12  
CBO  
CES  
C
l =100μA  
V
C
l =10μA  
V
EBO  
E
V
V
V
V
l =1.0A, I =2.0mA  
1.5  
1.0  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
B
l =200mA, I =2.0mA  
V
C
B
l =1.0A, I =2.0mA  
2.0  
V
C
B
V
=5.0V, I =1.0A  
2.0  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=5.0V, I =200mA  
25K  
15K  
4.0K  
100  
150K  
C
=5.0V, I =500mA  
FE  
C
=5.0V, l =1.0A  
FE  
C
f
=5.0V, l =200mA, f=100MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
8.0  
ob  
E
R2 (23-January 2012)  

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