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CEN-U57PBFREE

更新时间： 2024-01-18 05:19:52

品牌	Logo	应用领域
CENTRAL		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
2页	426K
描述
Power Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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CEN-U57PBFREE 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	5.77
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

CEN-U57PBFREE 数据手册

CEN-U05 CEN-U06 CEN-U07 NPN

CEN-U55 CEN-U56 CEN-U57 PNP

www.centralsemi.com

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CEN-U05/U55

series types are complementary silicon power

transistors designed for general purpose audio amplifier

applications. These devices are electrically equivalent to

National Semiconductor’s NSDU05, NSDU06, NSDU07,

NSDU55, NSDU56, and NSDU57.

MARKING: FULL PART NUMBER

TO-202 CASE

APPLICATIONS:

• Designed for general purpose high

voltage amplifiers and drivers

FEATURES:

• High Collector-Emitter breakdown voltage

• High 10W power dissipation

CEN-U05 CEN-U06 CEN-U07

SYMBOL CEN-U55 CEN-U56 CEN-U57

MAXIMUM RATINGS: (T =25°C)

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

100

CBO

CEO

EBO

100

4.0

2.0

Power Dissipation (T =25°C)

1.75

-65 to +150

71.4

12.5

Operating and Storage Junction Temperature

Thermal Resistance

T , T

°C

stg

°C/W

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=Rated V

0.1

μA

CBO

EBO

CBO

=4.0V

100

μA

I =1.0mA (CEN-U05, CEN-U55)

CEO

I =1.0mA (CEN-U06, CEN-U56)

I =1.0mA (CEN-U07, CEN-U57)

100

CEO

I =250mA, I =10mA

0.5

0.35

1.2

CE(SAT)

BE(ON)

I =250mA, I =25mA

=1.0V, I =250mA

=1.0V, I =50mA

=1.0V, I =250mA

=1.0V, I =500mA

=5.0V, I =200mA, f=100MHz

MHz

=10V, I =0, f=1.0MHz

R2 (20-January 2012)

中文翻译

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