生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.78 | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 30 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 10000 | JEDEC-95代码: | TO-237AA |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 功耗环境最大值: | 1 W |
最大功率耗散 (Abs): | 2.5 W | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 125 MHz |
VCEsat-Max: | 1.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CENW14 | CENTRAL |
获取价格 |
Power Transistors | |
CENW14LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 1-Element, Silicon, TO-237AA, TO-237, 3 PIN | |
CENW42 | CENTRAL |
获取价格 |
Power Transistors | |
CENW42LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-237AA, Pla | |
CENW42PBFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, | |
CENW42TIN/LEAD | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, | |
CENW43 | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-237 | |
CENW45 | ETC |
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TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-237 | |
CENW51 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1A I(C) | TO-237VAR | |
CENW51A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1A I(C) | TO-237VAR |