Datasheet > CEM6080

CEM6080

更新时间： 2024-02-11 12:33:42

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	464K
描述
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

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技术参数
数据手册

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CEM6080 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

CEM6080 数据手册

CEM6080

N-Channel Electrical Characteristics T_A= 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 60V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

V_GS= V_DS, I_D= 250µA

VGS = 10V, ID = 5.6A

VGS = 4.5V, ID = 4.5A

mΩ

On-Resistance

Dynamic Characteristics ^c

Forward Transconductance

Input Capacitance

g_FS

C_iss

C_oss

C_rss

V_DS= 15V, I_D= 5.6A

655

100

V_DS= 30V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= 30V, I_D= 4.4A,

V_GS= 10V, R_GEN= 1Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

21.8

2.9

4.4

28.9

V_DS= 30V, I_D= 5.6A,

V_GS= 10V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

5.6

1.2

V_SD

V_GS= 0V, I_S= 1.3A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

123 4 5 6 7

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