Datasheet > CEM6200

CEM6200

更新时间： 2022-05-13 16:00:44

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	411K
描述
N-Channel Enhancement Mode Field Effect Transistor

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CEM6200 数据手册

CEM6200

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

PRELIMINARY

60V, 2.6A, R_DS(ON)= 230mΩ @V_GS= 10V.

R_DS(ON)= 270mΩ @V_GS= 4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

±20

2.6

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

10.4

Maximum Power Dissipation

P_D

2.5

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

C/W

This is preliminary information on a new product in development now .

Details are subject to change without notice .

Rev 1. 2007.March

http://www.cetsemi.com

12 3 4

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