Datasheet > CEM4435A

CEM4435A

更新时间： 2024-02-04 12:10:09

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	107K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CEM4435A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

CEM4435A 数据手册

CEM4435A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-30V, -8A, R_DS(ON)= 20mΩ @V_GS= -10V.

R_DS(ON)= 33mΩ @V_GS= -4.5V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

SO-8

ABSOLUTE MAXIMUM RATINGS T_A= 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

-30

±20

-8

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

-50

Maximum Power Dissipation

P_D

2.5

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

Thermal Characteristics

Parameter

Symbol

Limit

Units

Thermal Resistance, Junction-to-Ambient ^b

RθJA

C/W

Rev 1. 2005.March

http://www.cetsemi.com

Specification and data are subject to change without notice .

5 - 52

12 3 4

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