Datasheet > CEM4804

CEM4804

更新时间： 2022-11-24 21:54:39

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	55K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor

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CEM4804 数据手册

CEM4804

PRELIMINARY

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V , 7.9A , RDS(ON)=20m

@VGS=10V.

@VGS=4.5V.

Ω

D1 D1 D2 D2

RDS(ON)=30m

Super high dense cell design for extremely low R^DS(ON)

High power and current handing capability.

Surface Mount Package.

S1 G1 S2 G2

SO-8

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

7.9

Drain Current-Continuous^a

-Pulsed

Drain-Source Diode Forward Current ^a

Maximum Power Dissipation ^a

Operating Junction and Storage

Temperature Range

, TSTG

-55 to 150

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient ^a

RįJA

62.5

5-98

12 3 4 5

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